BAW76TR【PDF 1/2 页】DIODE HI COND 75V 300MA DO-35

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?2004 Fairchild Semiconductor Corporation

www.fairchildsemi.com

December 2004

BAW76 Rev. A

BAW76 Small Signal Diode

BAW76

Small Signal Diode

Absolute Maximum Ratings *

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Electrical Characteristics

= 25°C unless otherwise noted

Symbol Parameter Value Unit

VRRM

Maximum Repetitive Reverse Voltage 75 V

IF(AV)

Average Rectified Forward Current 300 mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

4.0

TSTG

Storage Temperature Range -65 to +200

°C

Operating Junction Temperature 175

°C

Symbol Parameter Value Unit

Power Dissipation 500 mW

RθJA

Thermal Resistance, Junction to Ambient 300

°C/W

Symbol Parameter Conditions Min. Max Units

Breakdown Voltage IR

= 5

μA75V

Forward Voltage IF

= 100mA 1.0 V

Reverse Leakage VR

= 50V

100

= 50V, T

= 150

°C

100

μA

Total Capacitance VR

= 0, f = 1.0MHz 2 pF

trr

Reverse Recovery Time IF

= 10mA, V

= 6.0V

= 100

?, Irr

= 1mA

= I

= 10mA, I

= 1.0mA,

= 100

DO-35

Color Band Denotes Cathode

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